We systematically investigate the influence of growth interruption time on the properties of InAs/GaSb type-II superlattices (T2SLs) epitaxial materials grown by molecular beam epitaxy (MBE). X-ray diffraction (XRD) and atomic force microscope (AFM) are used to characterize the material quality and morphology. The full width at half maximum (FWHM) of the XRD 0th satellite peaks ranges from 32'' to 41'', and the root mean square (RMS) roughness on a 5 μm×5 μm scan area is 0.2 nm. Photoluminescence (PL) test is used to reveal the influence of the growth interruption time on the optical property. Grazing incidence X-ray reflectivity (GIXRR) measurements are performed to analyze the roughness of the interface. The interface roughness (0.24 nm) is optimal when the interruption time is 0.5 s. The crystal quality of T2SLs can be optimized with appropriate interruption time by MBE, which is a guide for the material epitaxy of high performance T2SL infrared detector.

A compact Fano resonant temperature sensor composed of a micro-ring resonator (MRR) coupled double-T-shaped waveguide is developed. The coupling gap and coefficient of the device are optimized by the finite difference time domain (FDTD) method. The maximum slope ratio (SR) of the MRR-coupled single-T-shaped waveguide is -2.13 dB/nm. The SR of the double-T-shaped waveguide is -49.69 dB/nm which is 23 times that of the single-T-shaped waveguide. The simulation results show that the temperature sensitivity of optical intensity decreases with increasing temperature in the range from 303.6 K to 343.8 K. The wavelength-temperature sensitivity of the double-T-shaped waveguide microring is 76.5 pm/K. After introducing the double-T-shaped waveguide structure, the device's performance is greatly improved, and the double-T-shaped waveguide has a good application prospect as a temperature sensor.

To improve the integration of Fano devices, we design a T-shaped waveguide coupling micro-ring resonator (MRR) structure to achieve a single cavity with Fano resonance in the whole spectral bands. The mathematical relationship between the phase factor, the coupling coefficient of the bus waveguide, and the Fano resonance slope extinction ratio (ER) is established. The electron beam exposure process is used to obtain a device with an insertion loss of ~3 dB. The maximum ER of the Fano lineshape exceeds 15 dB, and the slope ratio (SR) is 251.3 dB/nm. This design improves the compactness of the Fano resonant device.

To enhance the optical computation's utilization efficiency, we develop an optimization method for optical convolution kernel in the optoelectronic hybrid convolution neural network (OHCNN). To comply with the actual calculation process, the convolution kernel is expanded from single-channel to two-channel, containing positive and negative weights. The Fashion-MNIST dataset is used to test the network architecture's accuracy, and the accuracy is improved by 7.5% with the optimized optical convolution kernel. The energy efficiency ratio (EER) of two-channel network is 46.7% higher than that of the single-channel network, and it is 2.53 times of that of traditional electronic products.

硅基光子集成谐振腔作为光学敏感单元对芯片级光学陀螺的性能起着至关重要的作用。以互易敏感增强型双微环架构的光子集成陀螺谐振腔为研究对象，通过时域有限差分法仿真分析了双微环谐振腔的关键结构参数，并通过搭建仿真链路研究了微环谐振腔的品质因子、精细度与耦合系数、传输损耗的内在关系。在此基础上，选取典型结构参数设计版图，基于无源硅基光子集成工艺的多项目晶圆流片制备了双微环谐振腔器件。测试结果表明，当微环半径为500 μm、波导与微环的耦合系数为0.3时，在工作波长1550 nm附近微环的自由光谱范围为0.182 nm，3 dB带宽为0.045 nm，精细度为4.04，品质因子约为3.4×104。本研究结果为双微环谐振腔的进一步优化设计提供了依据。

集成光子技术引领了小型化光学器件的发展，可以在单块芯片上实现非常复杂的功能。许多集成光学器件，如分光器、谐振器、激光器、放大器、滤波器和调制器等均已实现单片集成或者混合集成，各国在设计、制造复杂的光子集成器件投入了大量的研究工作。通过集成光学技术制造的光学陀螺仪可以有效减小陀螺仪的重量和尺寸，降低成本和功耗，并增加系统的可靠性，性能指标也逐渐提升，具有良好的发展潜力。本文介绍了国内外集成光学陀螺仪敏感单元的研究状况，简要分析了当前通过采用不同材料平台和新型谐振结构设计提升集成光学陀螺仪性能的研究特点，期望有助于该领域的研究人员对集成光学陀螺技术的最近进展有比较全面的了解。

提出了一种基于10.6 μm波长的小型化非线性全光衍射深度神经网络建模方法。采用波长为10.6 μm的二氧化碳(CO₂)激光光源,其对应的神经网络物理尺寸为1 mm×1 mm,依据相关的光学物理参数特性,构建了基于10.6 μm波长的非线性全光衍射深度神经网络模型框架,使用网格搜索法确定最优的神经网络模型超参数,并选择交叉熵损失函数和Adam优化器对神经网络进行了优化。分别在MNIST手写数字数据集和Fashion-MNIST数据集上对该方法进行了测试,其分类结果分别达到了0.9630和0.8743。所提方法为制备小型化的全光衍射光栅提供了理论参考。